首页 >C3377-Q>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
W-bandMultifunction:Multiplier/MPA | UMS United Monolithic Semiconductors | UMS | ||
W-bandMultifunction:Multiplier/MPA | UMS United Monolithic Semiconductors | UMS | ||
DigitallyControllableOff-LineCV/CCQRFlybackSwitcherICwithIntegratedHigh-VoltageSwitch,SynchronousRectificationandFluxLinkFeedback DigitallyControlledviaI2CInterface •Dynamicadjustmentofpowersupplyvoltageandcurrent •Telemetryforpowersupplystatusandfaultmonitoring •Comprehensivesetofconfigurableprotectionfeatures •PowiGaN™technology–upto100Wwithoutheatsinks(INN3378C, INN3379CandINN337 | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | POWERINT | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Lowon-resistance | TYSEMITY Semiconductor Co., Ltd 台湾TY半导体台湾TY半导体有限公司 | TYSEMI | ||
MOSFieldEffectTransistor Features •Lowon-resistance RDS(on)1=44mMAX.(VGS=10V,ID=10A) RDS(on)2=78mMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTYP. •Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3377isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=44mΩMAX.(VGS=10V,ID=10A) RDS(on)2=78mΩMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTY | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
±15kVESD-Protected,1μA,16Mbps,Dual/QuadLow-VoltageLevelTranslatorsinUCSP | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
±15kVESD-Protected,1uA,16Mbps,DualQuadLow-VoltageLevelTranslatorsinUCSP | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
±15kVESD-Protected,1uA,16Mbps,DualQuadLow-VoltageLevelTranslatorsinUCSP | MaximMaxim Integrated Products 美信美信半导体 | Maxim |
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