Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP

Multilayer Ceramic Chip Capacitors

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

文件：138.75 Kbytes 页数：1 Pages

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东电化

MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

文件：1.66928 Mbytes 页数：12 Pages

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东电化

Multilayer Ceramic Chip Capacitors

文件：232.1 Kbytes 页数：3 Pages

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东电化

Multilayer Ceramic Chip Capacitors

文件：138.71 Kbytes 页数：1 Pages

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东电化

积层贴片陶瓷片式电容器

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东电化

积层贴片陶瓷片式电容器

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东电化

贴片电容(MLCC)

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东电化

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 4.7UF 100V X7S 1210

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东电化