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C16855

~25째 medium beam optimized for CREE XP-L and XM-L. Variant made from PC.

LEDILLEDiL

芬兰

C16855_HB-2X2-M-PC

包装:散装 类别:光电器件 光学 - 镜头 描述:LENS ARRAYSQUARE4 POS50.0MM (D)8

LEDILLEDiL

芬兰

UPD16855A

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855A

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855AG

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855AG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855BC

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855BC

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855BG

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855BG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855CG

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855CG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855DG

MOSINTEGRATEDCIRCUIT

FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD16855DG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

US16855

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

US16855

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

供应商型号品牌批号封装库存备注价格
LEDiL
12121
询价
松下
02+
TO-92
5000
询价
JXK/杰信科
21+ROHS
TO-92
1999998
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
2022
989
原厂原装正品,价格超越代理
询价
ZZZ
23+
原厂封装
5177
现货
询价
2022+
7300
原装现货
询价
23+
7300
专注配单,只做原装进口现货
询价
23+
7300
专注配单,只做原装进口现货
询价
2021+
CAN
6430
原装现货/欢迎来电咨询
询价
AGILENT
QFN
6698
询价
更多C16855供应商 更新时间2024-4-29 9:31:00