Computer Cable

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GENERAL

通用电缆

包装：线轴 类别：电缆，电线 多芯导线 描述：6P/24 7/32TC IND SH LO-CAP CM

PRYSMIAN

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

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Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48 minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior perform

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Motorola

摩托罗拉