包装：散装 类别：开关 配件 描述：SWITCH CHASSIS PB F SERIES

C\u0026K

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：743.28 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.46176 Mbytes 页数：6 Pages

DOINGTER

杜因特

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.4A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：717.16 Kbytes 页数：4 Pages

CET-MOS

华瑞