HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

IGBT With Antiparallel Diode Preliminary data sheet

文件：71 Kbytes 页数：9 Pages

Infineon

英飞凌

IGBT With Antiparallel Diode Preliminary data sheet

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：240.11 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.88 Kbytes 页数：2 Pages

ISC

无锡固电

MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

文件：696.77 Kbytes 页数：4 Pages

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