丝印：BUP；Package：WQFN；HIGH EFFICIENCY CHARGE PUMP FOR 7 WLEDs DRIVER WITH 1 WIRE INTERFACE

1FEATURES 2· 2.7 V to 6.0 V Input Voltage Range · 1´ and 1.5´ Charge Pump · Auto Switching Between 1´ and 1.5´ Modes · 750 kHz Charge Pump Frequency · Seven Individually-regulated WLED Current Sinks · Single- Wire Interface for Dimming and ON/OFF Control · 25 mA max LED Current for Six Cu

文件：1.03448 Mbytes 页数：26 Pages

TI

德州仪器

丝印：BUP；Package：WQFN；HIGH EFFICIENCY CHARGE PUMP FOR 7 WLEDs DRIVER WITH 1 WIRE INTERFACE

1FEATURES 2· 2.7 V to 6.0 V Input Voltage Range · 1´ and 1.5´ Charge Pump · Auto Switching Between 1´ and 1.5´ Modes · 750 kHz Charge Pump Frequency · Seven Individually-regulated WLED Current Sinks · Single- Wire Interface for Dimming and ON/OFF Control · 25 mA max LED Current for Six Cu

文件：1.03448 Mbytes 页数：26 Pages

TI

德州仪器

丝印：BUP；Package：WQFN；HIGH EFFICIENCY CHARGE PUMP FOR 7 WLEDs DRIVER WITH 1 WIRE INTERFACE

1FEATURES 2· 2.7 V to 6.0 V Input Voltage Range · 1´ and 1.5´ Charge Pump · Auto Switching Between 1´ and 1.5´ Modes · 750 kHz Charge Pump Frequency · Seven Individually-regulated WLED Current Sinks · Single- Wire Interface for Dimming and ON/OFF Control · 25 mA max LED Current for Six Cu

文件：1.03448 Mbytes 页数：26 Pages

TI

德州仪器

丝印：BUP；Package：WQFN；HIGH EFFICIENCY CHARGE PUMP FOR 7 WLEDs DRIVER WITH 1 WIRE INTERFACE

1FEATURES 2· 2.7 V to 6.0 V Input Voltage Range · 1´ and 1.5´ Charge Pump · Auto Switching Between 1´ and 1.5´ Modes · 750 kHz Charge Pump Frequency · Seven Individually-regulated WLED Current Sinks · Single- Wire Interface for Dimming and ON/OFF Control · 25 mA max LED Current for Six Cu

文件：1.03448 Mbytes 页数：26 Pages

TI

德州仪器

60V Radiation Tolerant power MOSFET

Features • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dose (TID) tolerant 30 kRad approved • N-channel Product validation Qualified according AEC Q101 Electrical parameters in Table 4 are guaranteed pre- and post-irradiation.

文件：653.56 Kbytes 页数：11 Pages

Infineon

英飞凌

60V Radiation Tolerant power MOSFET

Features • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dose (TID) tolerant 30 kRad approved • N-channel Product validation Qualified according AEC Q101 Electrical parameters in Table 4 are guaranteed pre- and post-irradiation.

文件：653.56 Kbytes 页数：11 Pages

Infineon

英飞凌

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件：300.39 Kbytes 页数：7 Pages

SIEMENS

西门子

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)

IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode

文件：325.08 Kbytes 页数：8 Pages

SIEMENS

西门子

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free)

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件：381.06 Kbytes 页数：7 Pages

SIEMENS

西门子

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌