HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BUL310 and BUL310PI are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL

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STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor, 1000V, 5A

ST

意法半导体

SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ® Power Transistor • N channel • Enhancement mode

文件：240.01 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

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ISC

无锡固电

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：109.99 Kbytes 页数：3 Pages

PANJIT

強茂