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BUK9Y11-30B

N-channel TrenchMOS logic level FET

1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Very low on-state resistance n Q101 compliant n 175 °C

文件:642.92 Kbytes 页数:12 Pages

NEXPERIA

安世

BUK9Y113-100E

丝印:911310E;Package:LFPAK56;N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive aval

文件:734.99 Kbytes 页数:13 Pages

NEXPERIA

安世

BUK9Y11-80E

丝印:91180E;Package:LFPAK56;N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive av

文件:745.66 Kbytes 页数:13 Pages

NEXPERIA

安世

BUK9Y11-30B

N-channel TrenchMOS logic level FET

文件:88.84 Kbytes 页数:12 Pages

恩XP

恩XP

BUK9Y11-30B_15

N-channel TrenchMOS logic level FET

文件:96.08 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

BUK9Y113-100E

N-channel 100 V, 113 m logic level MOSFET in LFPAK56

文件:298.91 Kbytes 页数:13 Pages

恩XP

恩XP

BUK9Y113-100E_15

N-channel 100 V, 113 m廓 logic level MOSFET in LFPAK56

文件:307.72 Kbytes 页数:13 Pages

PHI

飞利浦

PHI

BUK9Y11-80E

N-channel 80 V, 11 m廓 logic level MOSFET in LFPAK56

文件:322.92 Kbytes 页数:13 Pages

恩XP

恩XP

BUK9Y11-80E_15

N-channel 80 V, 11 m廓 logic level MOSFET in LFPAK56

文件:323.19 Kbytes 页数:13 Pages

PHI

飞利浦

PHI

BUK9Y11-30B

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • AEC-Q101 compliant\n• Low conduction losses due to low on-state resistance\n• Suitable for logic level gate drive sources\n• Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世

技术参数

  • Package version:

    SOT669

  • Package name:

    LFPAK56; Power-SO8

  • Product status:

    Production

  • Channel type:

    N

  • Number of transistors:

    1

  • V_DS [max] (V):

    30

  • R_DSon [max] @ V_GS = 10 V (mΩ):

    9

  • R_DSon [max] @ V_GS = 5 V (mΩ):

    11

  • R_DSon [max] @ V_GS = 4.5 V (mΩ):

    12

  • I_D [max] (A):

    59

  • Q_GD [typ] (nC):

    5.4

  • P_tot [max] (W):

    75

  • Q_r [typ] (nC):

    20

  • V_GSth [typ] (V):

    1.5

  • Automotive qualified:

    Y

  • C_iss [typ] (pF):

    1211

  • C_oss [typ] (pF):

    341

  • Date:

    2011-02-17

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
13048
全新原装正品/价格优惠/质量保障
询价
恩XP
LFPAK
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
恩XP
10+
NA
245
询价
恩XP
10+
NA
245
询价
FSC
17+
NA
6200
100%原装正品现货
询价
FSC
24+
SMD
12000
原厂/代理渠道价格优势
询价
NEXPERIA/安世
2447
SOT669
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
恩XP
2022+
DFN56
50000
原厂代理 终端免费提供样品
询价
Nexperia
22+
LFPAK56
25000
只有原装绝对原装,支持BOM配单!
询价
恩XP
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
更多BUK9Y11供应商 更新时间2025-11-2 9:38:00