丝印：BUK964R2-80E；Package：D2PAK；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rate

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丝印：BUK964R2-60E；Package：D2PAK；N-channel TrenchMOS logic level FET

文件：722.83 Kbytes 页数：13 Pages

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N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

文件：994.17 Kbytes 页数：14 Pages

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：332.53 Kbytes 页数：2 Pages

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TrenchMOS logic level FET

文件：327.93 Kbytes 页数：15 Pages

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N-channel TrenchMOS logic level FET

文件：379.32 Kbytes 页数：14 Pages

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N-channel TrenchMOS logic level FET

文件：215.24 Kbytes 页数：12 Pages

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N-channel TrenchMOS logic level FET

文件：271.1 Kbytes 页数：13 Pages

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N-channel TrenchMOS logic level FET

文件：271.1 Kbytes 页数：13 Pages

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N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance\n• Q101 compliant\n• Suitable for logic level gate drive sources\n• Suitable for thermally demanding environments due to 175 °C rating;

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