isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：333.31 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：333.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  A

文件：973.52 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS transistor standard level FET

文件：102.14 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS logic level FET

文件：306.62 Kbytes 页数：15 Pages

恩XP

N-channel TrenchMOS logic level FET

文件：373.15 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance;

Nexperia

安世

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • AEC-Q101 compliant\n• Low conduction losses due to low on-state resistance\n• Suitable for logic level gate drive sources\n• Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世

MOSFET N-CH 55V 66A D2PAK

恩XP