丝印：BUK953R2-40E；Package：TO-220AB；N-channel TrenchMOS logic level FET

文件：340.47 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC

文件：377.41 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：355.08 Kbytes 页数：3 Pages

ISC

无锡固电

TrenchMOS logic level FET

文件：331.43 Kbytes 页数：16 Pages

恩XP

N-channel TrenchMOS logic level FET

文件：263.27 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.\n

Nexperia

安世

N-channel TrenchMOS logic level FET

Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Nexperia

安世