TrenchMOS횚 transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

文件：52.76 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：332.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

文件：1.1098 Mbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世