isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件：332.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

文件：958.02 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS logic level FET

文件：298.68 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

文件：347.26 Kbytes 页数：13 Pages

PHI

飞利浦

BUK9275-100A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世