| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印:71510E;Package:LFPAK56;N-channel 100 V, 15 mΩ standard level MOSFET in LFPAK56 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive 文件:746.16 Kbytes 页数:13 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:715310E;Package:LFPAK56;N-channel 100 V, 153 mΩ standard level MOSFET in LFPAK56 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive 文件:741.3 Kbytes 页数:13 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:71560E;Package:LFPAK56;N-channel 60 V, 15 mΩ standard level MOSFET in LFPAK56 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive 文件:763.99 Kbytes 页数:13 Pages | NEXPERIA 安世 | NEXPERIA | ||
N-channel 100 V, 15 m廓 standard level MOSFET in LFPAK56 文件:322.03 Kbytes 页数:13 Pages | 恩XP | 恩XP | ||
N-channel 100 V, 15 m廓 standard level MOSFET in LFPAK56 文件:324.75 Kbytes 页数:13 Pages | PHI 飞利浦 | PHI | ||
N-channel 100 V, 153 m廓 standard level MOSFET in LFPAK56 文件:319.31 Kbytes 页数:13 Pages | 恩XP | 恩XP | ||
N-channel 100 V, 153 m廓 standard level MOSFET in LFPAK56 文件:319.03 Kbytes 页数:13 Pages | PHI 飞利浦 | PHI | ||
N-channel 60 V, 15 m廓 standard level MOSFET in LFPAK56 文件:350.65 Kbytes 页数:13 Pages | 恩XP | 恩XP | ||
N-channel 60 V, 15 m廓 standard level MOSFET in LFPAK56 文件:351.3 Kbytes 页数:13 Pages | PHI 飞利浦 | PHI | ||
N-channel 100 V, 15 mΩ standard level MOSFET in LFPAK56 Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. • Q101 compliant\n• Suitable for thermally demanding environments due to 175 °C rating\n• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C; | Nexperia 安世 | Nexperia |
技术参数
- Package version:
SOT669
- Package name:
LFPAK56; Power-SO8
- Product status:
Production
- Channel type:
N
- Number of transistors:
1
- V_DS [max] (V):
100
- R_DSon [max] @ V_GS = 10 V (mΩ):
15
- I_D [max] (A):
68
- Q_GD [typ] (nC):
17.7
- Q_G(tot) [typ] @ V_GS = 10 V (nC):
54.5
- P_tot [max] (W):
195
- Q_r [typ] (nC):
82
- V_GSth [typ] (V):
3
- Automotive qualified:
Y
- C_iss [typ] (pF):
2968
- C_oss [typ] (pF):
283
- Date:
2013-02-20
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
Nexperia(安世) |
2447 |
SOT669 |
115000 |
1500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
NEXPERIA |
25+ |
SOT1023 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
恩XP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT669 |
10990 |
原装正品 |
询价 | ||
Nexperia USA Inc. |
2022+ |
SC-100,SOT-669 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
恩XP |
22+ |
LFPAK56 |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
NEXPERIA/安世 |
2023+ |
SOT669 |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
恩XP |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
24+ |
N/A |
61000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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