BUK7620-55A

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotivea

BUK7620-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

BUK7620-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

BUK7620-55

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended