TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

文件：64.31 Kbytes 页数：8 Pages

PHI

飞利浦

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

文件：314.35 Kbytes 页数：15 Pages

PHI

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：331.41 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

文件：22.7 Kbytes 页数：5 Pages

PHI

飞利浦

TrenchMOS standard level FET

文件：338.54 Kbytes 页数：15 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

文件：64.19 Kbytes 页数：8 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

恩XP

TrenchMOS standard level FET

恩XP

TrenchMOS transistor Standard level FET

恩XP