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BUK75150-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件:305.13 Kbytes 页数:2 Pages

ISC

无锡固电

BUK75150-55A

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件:468.28 Kbytes 页数:14 Pages

NEXPERIA

安世

BUK7515-100A

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件:304.8 Kbytes 页数:2 Pages

ISC

无锡固电

BUK7515-100A

N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

文件:322.21 Kbytes 页数:12 Pages

NEXPERIA

安世

BUK75150-55A

TrenchMOS standard level FET

文件:299.65 Kbytes 页数:15 Pages

PHI

飞利浦

PHI

BUK7515-100A

TrenchMOS횚 transistor Standard level FET

文件:65.79 Kbytes 页数:7 Pages

PHI

飞利浦

PHI

BUK75150-55A

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世

BUK7515-100A

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Nexperia

安世

详细参数

  • 型号:

    BUK7515

  • 功能描述:

    MOSFET RAIL PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
PH
24+
SOT78TO-220AB
8866
询价
恩XP
16+
NA
8800
诚信经营
询价
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
恩XP
23+
TO-220AB
50000
全新原装正品现货,支持订货
询价
恩XP
2022+
TO-220AB
12888
原厂代理 终端免费提供样品
询价
恩XP
2022+
TO-220
30000
进口原装现货供应,绝对原装 假一罚十
询价
恩XP
24+
NA/
22500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
恩XP
20+
TO-220
32500
现货很近!原厂很远!只做原装
询价
恩XP
23+24
TO-220AB
49820
主营全系列二三极管、MOS场效应管、
询价
恩XP
22+
TO-220AB
17359
询价
更多BUK7515供应商 更新时间2025-11-3 16:30:00