TRENCHMOS-TM STANDARD LEVELl FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7508-40B in SOT78 (TO-220AB) BUK7608-40B in SOT404 (D2-PAK). Features ■Very low on-s

文件：272.52 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

General description N-channel enhancement mode field-effect power transistor in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. Features ■ Very low on-state resistance ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible Applications ■ Automotive

文件：188.84 Kbytes 页数：12 Pages

恩XP

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：305.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：477.04 Kbytes 页数：15 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：305.41 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen

文件：51.02 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：305.45 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive systems ■

文件：130.919 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：312.03 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：90.61 Kbytes 页数：14 Pages

恩XP