isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：353 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：744.64 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS standard level FET

文件：277.54 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

文件：220.35 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

文件：220.35 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS standard level FET

文件：220.35 Kbytes 页数：13 Pages

PHI

飞利浦

BUK7230-55A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for standard level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世