N-channel TrenchMOS logic and standard level FET

1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive appl

文件：308.51 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel TrenchMOS FET

1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive appl

文件：299.45 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel TrenchMOS logic and standard level FET

文件：194.61 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS FET

文件：185.49 Kbytes 页数：14 Pages

恩XP

N-channel TrenchMOS FET

文件：185.49 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic and standard level FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

Nexperia

安世

N-channel TrenchMOS FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

Nexperia

安世