Smart High-Side Power Switch Two Channels: 2 x 90m??Status Feedback

Smart High-Side Power Switch Two Channels: 2 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protecti

文件：240.98 Kbytes 页数：14 Pages

INFINEON

英飞凌

Smart High-Side Power Switch Two Channels: 2 x 90m??Status Feedback

Smart High-Side Power Switch Two Channels: 2 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protecti

文件：240.98 Kbytes 页数：14 Pages

INFINEON

英飞凌

Smart High-Side Power Switch PROFET Two Channels, 140 m 廓

Product Summary The BTS5231-2GS is a dual channel high-side power switch in PG-DSO-14-31 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basi

文件：840.48 Kbytes 页数：27 Pages

INFINEON

英飞凌

Smart High-Side Power Switch

Product Summary The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basic

文件：487.98 Kbytes 页数：25 Pages

INFINEON

英飞凌

Smart High-Side Power Switch PROFET Two Channels, 25 mΩ

Basic Features • Very low standby current • 3.3 V and 5 V compatible logic pins • Improved electromagnetic compatibility (EMC) • Stable behavior at under-voltage • Logic ground independent from load ground • Secure load turn-off while logic ground disconnected • Optimized inverse current ca

文件：293.4 Kbytes 页数：28 Pages

INFINEON

英飞凌

Smart High-Side Power Switch

Overview Product Summary The BTS5242-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technolog

文件：509.69 Kbytes 页数：24 Pages

INFINEON

英飞凌

Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor

文件：279.82 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Overload protection ● Current limitation ● Shor

文件：277.02 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features •Overload protection •Current l

文件：151.72 Kbytes 页数：15 Pages

SIEMENS

西门子

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Providing embedded protective functions. Features •Overload protection •Current limitation

文件：279.12 Kbytes 页数：15 Pages

INFINEON

英飞凌