BSS84AKM

50 V, 230 mA P-channel Trench MOSFET;

General description\nP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits\n■ Logic-level compatible\n■ Very fast switching\n■ Trench MOSFET technology\n■ ESD protection up to 1 kV\n■ AEC-Q101 qualified

恩XP

BSS84AKM

50 V, 230 mA P-channel Trench MOSFET; • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ESD protection up to 1 kV\n• AEC-Q101 qualified\n;

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n

BSS84AKM

丝印：ZA；Package：SOT883；50 V, 230 mA P-channel Trench MOSFET

BSS84AKMB

50 V, single P-channel Trench MOSFET; • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ESD protection up to 1 kV\n• Ultra thin package profile with 0.37 mm height\n;

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n

BSS84AKM-TP

P-Channel Power MOSFET

Application ReverseBatteryprotection »Loadswitch oPowermanagement PWMApplication

BSS84AKM_15

50 V, 230 mA P-channel Trench MOSFET

PHI

BSS84AKMB

丝印：00000010；Package：DFN1006B-3；50 V, single P-channel Trench MOSFET

BSS84AKMB_15

50 V, single P-channel Trench MOSFET

PHI