BSS51

NPN Darlington transistors

DESCRIPTION NPNDarlingtontransistorinaTO-39metalpackage.PNPcomplements:BSS61andBSS62. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Integrateddiodeandresistor. APPLICATIONS •Industrialhighgainamplification.

BSS51

NPN SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

BSS51

NPN Darlington transistors

DESCRIPTION NPNDarlingtontransistorinaTO-39metalpackage.PNPcomplements:BSS61andBSS62. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Integrateddiodeandresistor. APPLICATIONS •Industrialhighgainamplification.

BSS51A

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS TheyareNPNtransistorsmountedinTO-39metalpackage. Theyaredesignedforuseinindustrialswitchingapplicationse.g.printhammer,solenoid,relayandlampdriving. PNPcomplementsaretheBSS60A–61A–62A. CompliancetoRoHS.

BSS5130

General purpose amplification (-30V, -1A)

BSS5130AHZGT116

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1A SST3

BSS5130AT116

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1A SST3

BSS5130T116

包装：卷带（TR） 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1A SST3