丝印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：284.54 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

丝印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：145.18 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

丝印：C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • High Dense Cell Design for Extremely Low RDS(ON) • Voltage Controlled Small Signal Switch • Surface Mount Package • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Complian

文件：627.8 Kbytes 页数：4 Pages

MCC

Power MOSFET N-Channel

Features: * Low On-Resistance : 6.0Ω * Low Input Capacitance: 20PF * Low Out put Capacitance : 9PF * Low Threshole :2.8V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

文件：98.79 Kbytes 页数：3 Pages

WEITRON

丝印：A76；Package：SOT-23；100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：A76；Package：SOT-23；100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

文件：67.49 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：1.73104 Mbytes 页数：8 Pages

VBSEMI

微碧半导体