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BSR30

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT89plasticpackage.NPNcomplements:BSR40;BSR41andBSR43. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Telephonyandgeneralindustrialapplications •Thickandthin-filmcircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BSR30

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89PNPSILICONPLANARMEDIUMPOWERTRANSISTOR COMPLEMENTARYTYPE–BSR40 PARTMARKINGDETAIL–BR1

Zetex

Zetex Semiconductors

Zetex

BSR30

PNP Medium Power Transistors

Features ●Highcurrent(max.1A) ●Lowvoltage(max.80V).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

BSR30

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT89plasticpackage. NPNcomplements:BSR40;BSR41andBSR43. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Telephonyandgeneralindustrialapplications •Thickandthin-filmcircuits.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

BSR30

60 V, 1 A PNP medium power transistor

1.Generaldescription PNPmediumpowertransistorinaSOT89Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •AEC-Q101qualified 3.Applicatio

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

BSR30

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

DIODESDiodes Incorporated

达尔科技

DIODES

BSR302N

OptiMOS2 Small-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel(4.5V) •Avalancherated •FootprintcompatibletoSOT23 •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BSR302N

OptiMOS짰2 Small-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel(4.5V) •Avalancherated •FootprintcompatibletoSOT23 •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

ZPSEMI

ZP Semiconductor

ZPSEMI

BSR302N

OptiMOS 2 Small-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel(4.5V) •Avalancherated •FootprintcompatibletoSOT23 •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

TYSEMITaiwan TY Semiconductor Co. , Ltd.

台湾TY半导体台湾TY半导体有限公司

TYSEMI

BSR30-Q

60 V, 1 A PNP medium power transistor

1.Generaldescription PNPmediumpowertransistorinaSOT89Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •QualifiedaccordingtoAEC-Q101and

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

BSR30,115

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-243AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 60V 1A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

BSR30F

包装:卷带(TR) 封装/外壳:TO-243AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:BSR30/SOT89/MPT3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

晶体管资料

  • 型号:

    BSR30

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    表面帖装型 (SMD)_低频或音频放大 (LF)_开关管

  • 封装形式:

    贴片封装

  • 极限工作电压:

    70V

  • 最大电流允许值:

    1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

  • 放大倍数:

    β>40

  • 图片代号:

    H-100

  • vtest:

    70

  • htest:

    999900

  • atest:

    1

  • wtest:

    0

详细参数

  • 型号:

    BSR30

  • 制造商:

    KEXIN

  • 制造商全称:

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述:

    PNP Medium Power Transistors

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
2019+
SOT-89
78550
原厂渠道 可含税出货
询价
NEXPERIA/安世
20+
SOT-89
5500
代理库存,房间现货,有挂就是现货
询价
NEXPERIA/安世
20+
SOT-89
120000
原装正品 可含税交易
询价
NXP/恩智浦
SOT89
7906200
询价
PHILIPS
2017+
SOT-89
48520
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NXP
12+
SOT89
15000
全新原装,绝对正品,公司现货供应。
询价
ROHM
13+
DIP
12003
原装分销
询价
NXP恩智浦/PHILIPS飞利浦
2008++
SOT-89
6680
新进库存/原装
询价
PHILIPS
23+
SOT-89
26000
优势库存
询价
ROHM原装
1512+ROHS
DIP
9856
全新现货!低价支持实单!!一片起订
询价
更多BSR30供应商 更新时间2024-4-27 16:04:00