BSN

Space-saving Two-wire Signal Conditioners B-UNIT

BSN20

Marking：M8-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: BSN20inSOT23. Features ■TrenchMOS™technology ■Veryfastswitching ■Logiclevelcompatible ■Subminiaturesurfacemountpackage. Applications ■

BSN20

N-Channel MOSFET

Features ●TrenchMOS™technology ●Veryfastswitching ●Logiclevelcompatible ●Subminiaturesurfacemountpackage.

BSN20

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

BSN20

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSw

BSN20

N-Channel Enhancement Mode MOSFET

N-ChannelEnhancementModeMOSFET

BSN20

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSN20inSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applicati

BSN20.215

N-channel enhancement mode field-effect transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: BSN20inSOT23. Features ■TrenchMOS™technology ■Veryfastswitching ■Logiclevelcompatible ■Subminiaturesurfacemountpackage. Applications ■

BSN205

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

BSN205A

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching