| 订购数量 | 价格 |
|---|---|
| 1+ |
- 厂家型号：
BSM100GB120DN2_E3256
- 产品分类：
IC芯片
- 生产厂商：
- 库存数量：
2500
- 产品封装：
原厂封装
- 生产批号：
2022+
- 库存类型：
- 更新时间：
2025-11-2 9:14:00
BSM100GB120DN2_E3256_INFINEON/英飞凌_IGBT 模块 IGBT 1200V 100A北京光敏源科
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号：
BSM100GB120DN2_E3256
- 功能描述：
IGBT 模块 IGBT 1200V 100A
- RoHS：
否
- 制造商：
Infineon Technologies
- 产品：
IGBT Silicon Modules
- 配置：
Dual 集电极—发射极最大电压
- VCEO：
600 V
- 集电极—射极饱和电压：
1.95 V 在25
- C的连续集电极电流：
230 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
445 W
- 最大工作温度：
+ 125 C
- 封装/箱体：
34MM
相近型号
- BSM100GB120DN2E3238
- BSM100GB120DN2(DLC)
- BSM100GB120DN2E3256
- BSM100GB120DN2
- BSM100GB120DN11
- BSM100GB120DN2FE3256
- BSM100GB120DN1
- BSM100GB120DLCKHOSA1
- BSM100GB120DLCKG
- BSM100GB120DN2HOSA1
- BSM100GB120DLCK
- BSM100GB120DLCHOSA1
- BSM100GB120DN2K
- BSM100GB120DLCB
- BSM100GB120DLC_E3256
- BSM100GB120DN2KHOSA1
- BSM100GB120DLC
- BSM100GB120D
- BSM100GB120DN2-S7
- BSM100GB1200DL
- BSM100GB120(DLC
- BSM100GB120DNCK
- BSM100GB120
- BSM100GB120N2
- BSM100GB100D
- BSM100GB120NC2K(DLCK
- BSM100GAR60DLC
- BSM100GAR120DN2K
- BSM100GB123D
- BSM100GAR120DN2
- BSM100GB128D
- BSM100GAR120DN
- BSM100GB128DE
- BSM100GAR120DLCK
- BSM100GB160D
- BSM100GAR120DLC
- BSM100GB170DL
- BSM100GAR120D
- BSM100GB170DLC
- BSM100GAL60DLC
- BSM100GB170DLCHOSA1
- BSM100GAL12ODL
- BSM100GB170DN2
- BSM100GAL120NC2K(DLC
- BSM100GAL120DN2K
- BSM100GB170DN2E3256
- BSM100GB170DN2HOSA1
- BSM100GAL120DN2
- BSM100GB173D
- BSM100GAL120DN
