OptiMOS ™ 5 功率 MOSFET 具有增强的温度额定值，可提高稳健性

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8\n\n优势:\n• Longer life time\n• Highest efficiency and power density\n• Highest system reliability\n• Thermal robustness\n ;

Infineon

英飞凌

丝印：014N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

文件：1.61643 Mbytes 页数：13 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The GT014N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：966.89 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

文件：1.60471 Mbytes 页数：13 Pages

Infineon

英飞凌

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

文件：1.60471 Mbytes 页数：13 Pages

Infineon

英飞凌