n-Channel Power MOSFET

Features • Optimized for e-fuse and OR-ing application • Ultra low RDS(on) in CanPAK-MX footprint • Low profile (

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Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.52381 Mbytes 页数：14 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.52381 Mbytes 页数：14 Pages

Infineon

英飞凌

20V-300V N-Channel Power MOSFET

With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and h • Lowest on-state resistance\n• High DC and pulsed current capability\n• Easy to design in\n• Double side cooling\n\n优势:\n• Increased battery lifetime/system efficiency\n• Saving space (reducing the number of devices needed)\n• Saving costs;

Infineon

英飞凌