DDR/DDR2 (For memory module) SPD Memory

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V ・Two-wire serial interface ・High reliability connection using Au pads and Au wires ・Se

文件：1.18422 Mbytes 页数：20 Pages

ROHM

罗姆

Double-cell Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory

●Description\nBR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)● ・256×8 bit architecture serial EEPROM\n・Wide operating voltage range: 1.7V-3.6V\n・Two-wire serial interface\n・High reliability connection using Au pads and Au wires\n・Self-Timed Erase and Write Cycle\n・Page Write Function (16byte)\n・Write Protect Mode\n   Settable Reversible Write Protect Function: ;

ROHM

罗姆

2 Kbit serial presence detect (SPD) EEPROM for double data rate (DDR1 and DDR2) DRAM modules

文件：411.26 Kbytes 页数：34 Pages

STMICROELECTRONICS

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2 Kbit Serial IC Bus EEPROM Serial Presence Detect for DDR2 DIMMs

文件：349.34 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

Backward compatible with the M34C02

文件：1.13409 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体