首页 >BP3258>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,6.9A,RDS(ON)=28mW@VGS=10V. RDS(ON)=34mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=45mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT7Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE(LEADFREE) | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI |
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