AC/DC隔离低PF

BPS

晶丰明源

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) = 17mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：748.28 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 27mW @VGS = -4.5V. RoHS compliant.

文件：778.43 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -9.3A, RDS(ON) = 18mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：671.11 Kbytes 页数：5 Pages

CET-MOS

华瑞