BSS123

N-ChannelMOSFET

Features ●VDS(V)=100V ●ID=0.17A(VGS=10V) ●RDS(ON)

BSS123

N-ChannelEnhancementModePowerMOSFET

FEATURE ●Pb-FreePackageisavailable.

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

BSS123

N-ChannelEnhancementModeMOSFET

BSS123

100VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@170mA

BSS123

SOT-23Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

BSS123

N-channelTrenchMOStransistorLogiclevelFET

FEATURES •’Trench’technology •Extremelyfastswitching •Logiclevelcompatible •Subminiaturesurfacemounting package GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- •Relaydriver •High-spe

BSS123

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

BSS123

N-Channel100-V(D-S)MOSFET

FEATURE: ●RuggedandRelaible ●HighdensitycelldesignforextremelylowRDS(on) ●SurfaceMountPackage ●VoltageControlledSmallSignalSwitch VDS(V)=100V ID=0.17A(VGS=10V) RDS(ON)

BSS123

NChannelMOSFET

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable