BSS123

SIPMOSSmall-Signal-Transistor

BSS123

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighDenseCellDesignforExtremelyLowRDS(ON) •VoltageControlledSmallSignalSwitch •SurfaceMountPackage •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSComplian

BSS123

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features HighdensitycelldesignforextremelylowRDS(ON). Applications ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

BSS123

N-CHANNELENHANCEMENTMODEMOSFET

Description TheseN-Channelenhancementmodefieldeffecttransistorsusesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurr

BSS123

SIPMOS??Small-Signal-TransistorFeature

BSS123

N-CHANNELPOWERMOSFET

FEATURE ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteand ControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

BSS123

N-channelTrenchMOStransistor

BSS123

NChannelMOSFET

NChannelMOSFET FEATURE ●SurfaceMountPackage ●HighDensityCellDesignforExtremelyLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable APPLICATION ●SmallServoMotorControls ●PowerMOSFETGateDrivers ●SwitchingApplication

BSS123

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS100V ●ID200mA ●RDS(ON)(atVGS=10V)

BSS123

N-ChannelEnhancementModeFieldEffectTramsistor

Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating