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BN0C31BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORYORGANIZATION PROGRAMMEMORY:Upto4Kbytesoftheprogrammemorycanresideon-chip(except80C31BH).Inadditionthedevicecanaddressupto64Kofprogrammemoryexternaltothechip. DATAMEMORY:Thismicrocontrollerhasa128x8on-chipRAM.Inadditionitcanaddressupto64Kb

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

BN0C51BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORYORGANIZATION PROGRAMMEMORY:Upto4Kbytesoftheprogrammemorycanresideon-chip(except80C31BH).Inadditionthedevicecanaddressupto64Kofprogrammemoryexternaltothechip. DATAMEMORY:Thismicrocontrollerhasa128x8on-chipRAM.Inadditionitcanaddressupto64Kb

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

BN150W

Terminal Blocks

Keyfeatures: •Touch-downterminalswithspring-loadedcaptivescrews •Jumpersavailableupto50Amodel •Fuseblockwithorwithoutblown-fuseindicatorinneonorLED •Mountson35mmstandardDINrail

IDECIDEC Corporation

IDEC株式会社

IDEC

BN1A3Q

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) •ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1A3Q

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) •ComplementarytransistorwithBA1A3Q

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BN1A4P

PNP SILICON TRANSISTOR

DESCRIPTION TheBN1A4Pisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1A4Z

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=10kΩ) •ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1A4Z

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

FEATURES •On-chipbiasresistor (R1=10kΩ)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BN1F4M

The BN1F4M is designed for use in medium speed switching circuit.

DESCRIPTION TheBN1F4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1F4N

The BN1F4N is esiged for use in medium speed switching circuit.

DESCRIPTION TheBN1F4Nisdsignedforuseinmediumspeedswitchingcircuit. FEATURES ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1F4Z

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

FEATURES •On-chipbiasresistor(R1=22kΩ) •ComplementarytransistorwithBA1F4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1F4Z

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithBA1F4Z

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BN1L3M

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithBA1L3M

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1L3M

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithBA1L3M

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BN1L3N

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBA1L3N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1L3N

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBA1L3N

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BN1L3Z

PNP SILICON TRANSISTOR

DESCRIPTION TheBN1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1L4L

PNP SILICON TRANSISTOR

DESCRIPTION TheBN1L4Lisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1L4M

PNP SILICON TRANSISTOR

DESCRIPTION TheBN1L4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BN1L4Z

COMPOUND TRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=47kΩ) •ComplementarytransistorwithBA1L4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

详细参数

  • 型号:

    BN

  • 制造商:

    INTEL

  • 制造商全称:

    Intel Corporation

  • 功能描述:

    CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

供应商型号品牌批号封装库存备注价格
BOSSARD 03
23+
原厂封装
5177
现货
询价
AVX
17+
原厂原装
2500
原装正品
询价
TPC
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
TPC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
TPC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
TPC/HILTO
21+
35200
一级代理/放心采购
询价
BOSSA
23+
12264
询价
WASHERFLATM3X1MMPLASTIC
867
询价
BN
09+
TO252
30000
普通
询价
Panasonic - BSG
2010+
N/A
66
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更多BN供应商 更新时间2024-4-19 11:40:00