BLM7002K

N-Channel Enhancement Mode Power MOSFET

BLV7002

BLV7002

CBT-BGA-7002

Minimumrealestaterequired

CBT-QFN-7002

Lowandstablecontactresistanceforreliableproductionyield

CEDM7002AE

SURFACEMOUNTSILICONN-CHANNELENHANCEMENT-MODEMOSFET

CEK7002A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,0.3A,RDS(ON)=6Ω@VGS=10V. RDS(ON)=6Ω@VGS=5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92package.

CEN7002A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,0.25A,RDS(ON)=3Ω@VGS=10V. RDS(ON)=4Ω@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23-Tpackage.

CEN7002A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,0.25A,RDS(ON)=3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Leadfreeproductisacquired. RDS(ON)=4W@VGS=4.5V.

CEN7002E

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,0.2A,RDS(ON)=3W@VGS=10V. RDS(ON)=4W@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. ESDprotectedupto2KV RoHScompliant. SOT-23-Tpackage.

CES7002A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,0.28A,RDS(ON)=2Ω@VGS=10V. RDS(ON)=3Ω@VGS=5V. ■HighdensecelldesignforlowRDS(ON). ■Ruggedandreliable. ■SOT-23package.