P-Channel Enhancement Mode Power MOSFET

Belling

上海贝岭

沟槽栅金属氧化物半导体场效应管

\n The BLM3401AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current;

Belling

上海贝岭

P-Channel Enhancement Mode Power MOSFET

文件：248.67 Kbytes 页数：6 Pages

Belling

上海贝岭

P-Channel 30V (D-S) 4.5A P-MOSFET

文件：202.99 Kbytes 页数：5 Pages

bookly

百力微电子

Quad Single-Supply Operational Amplifier

For Automotive Electronics and Industrial Control Systems

文件：342.72 Kbytes 页数：4 Pages

GEC

通用电气

10-bit, 100/150MSPS, Triple Video DACs

文件：994.86 Kbytes 页数：11 Pages

CADEKA