LDMOS L-band radar power transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to1.4 GHz range. Easy power control\nIntegrated dual side ESD protection\nHigh flexibility with respect to pulse formats\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (1.2 GHz to 1.4 GHz)\nInternally matched for ease of use\nCompliant to Directive 2002/95/EC, r;

Ampleon

安谱隆

LDMOS L-band radar power transistor

General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficienc

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Ampleon

安谱隆

Package：SOT-502B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 100V 17DB SOT502B

Ampleon USA Inc.

MUR

上传：深圳市铨博晟科技有限公司

SMD0201

MuRata

村田

上传：深圳市灿炜电子有限公司