首页 >BLF278C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Damperdiode DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecurrent •Excellen | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
8-12GHzGaNLowNoiseAmplifier | MMIC Custom MMIC Design Services, Inc. | MMIC | ||
Control/Communicators | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
4000CountsManualDMM | CYRUSTEKCyrustek corporation 承永科技承永资讯科技股份有限公司 | CYRUSTEK | ||
HybridAssembliesOPTICRECEIVERMODULES
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HybridAssembliesOPTICRECEIVERMODULES
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetector SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
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