BU406

7AMPERESNPNSILICONPOWERTRANSISTORS60WATTS150and200VOLTS

Thesedevicesarehighvoltage,highspeedtransistorsforhorizontaldeflectionoutputstagesofTV’sandCRT’s. •HighVoltage:VCEV=330or400V •FastSwitchingSpeed:tf=750ns(max) •LowSaturationVoltage:VCE(sat)=1V(max)@5A •PackagedinCompactJEDECTO–220AB

BU406

NPNSILICONPOWERTRANSISTORS

●7AContinuousCollectorCurrent ●15APeakCollectorCurrent ●60Wat25°CCaseTemperature

BU406

SILICONNPNSWITCHINGTRANSISTOR

DESCRIPTION TheBU406isasiliconEpitaxialPlanarNPNtransistorinJedecTO-220plasticpackage. ItisafastswitchingdeviceforuseinhorizontaldeflectionoutputstagesoflargescreensMTVreceiverswith110°CRT. ■STMicroelectronicsPREFERRED SALESTYPE ■NPNTRANSISTOR ■

BU406

NPNSILICONPOWERTRANSISTORS

BU406

SILICONNPNSWITCHINGTRANSISTOR

DESCRIPTION TheUTCBU406isaNPNexpitaxialplanartransistor.ItisafastswitchingdeviceforuseinhorizontaldeflectionoutputstagesoflargescreensMTVreceiverswith110℃CRT.

BU406

SILICONNPNSWITCHINGTRANSISTOR

BU406

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage;highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ForuseinhorizontaldeflectionoutputstagesofTV’sandCTV’scircuits

BU406

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseinTVhorizontaloutputandswitchingapplications.TO-220A

BU406

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighVoltage:VCEV=400V(Min) ·FastSwitchingSpeed-:tf=750ns(Max) ·LowSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=5A APPLICATIONS ·DesignedforuseinhorizontaldeflectionoutputstagesofTV’sandCRT’s

BU406

NPNPowerTransistors

NPNSILICONPOWERTRANSISTORS7AMPERES−60WATTS150AND200VOLTS Thesedevicesarehighvoltage,highspeedtransistorsforhorizontaldeflectionoutputstagesofTV’sandCRT’s. Features •HighVoltage:VCEV=330or400V •FastSwitchingSpeed:tf=750ns(max) •LowSaturationVoltag