N-channel Enhanced MOSFETs

BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• RoHS product\n• \n• ;

Belling

上海贝岭

N-CHANNEL SILICON POWER MOSFET

FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V)

文件：557.82 Kbytes 页数：5 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

文件：268.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

文件：565.63 Kbytes 页数：5 Pages

Fuji

富士通