N-channel Enhanced MOSFETs

BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast switching\n• Improved dv/dt capability\n• RoHS product\n;

Belling

上海贝岭

N-CHANNEL MOSFET in a TO-220FL Plastic Package

文件：1.43173 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：525.04 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：519.87 Kbytes 页数：5 Pages

CET-MOS

华瑞