首页 >BK225QB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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VHFpowerMOStransistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheVHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT123flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. FEATURES •E | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
P-channelenhancementmodeverticalD-MOStransistor DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES •LowRDS(on) •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
P-channelenhancementmodeverticalD-MOStransistor FEATURES ·LowRDS(on) ·DirectinterfacetoC-MOS,TTL, etc. ·High-speedswitching ·Nosecondarybreakdown. DESCRIPTION P-channelenhancementmode verticalD-MOStransistorina miniatureSOT223envelope, intendedforuseinrelay,high-speed andlinetransformerdrivers. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SIPMOS짰Small-Signal-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SIPMOSSmall-Signal-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
PhaseCutDimmableNon-isolatedBuckConverterforLEDRetrofitBulbwith | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Threequadranttriacshighcommutation | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Threequadranttriacshighcommutation | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Threequadranttriacshighcommutation GENERALDESCRIPTION GlasspassivatedhighcommutationtriacsinaplasticenvelopeintendedforuseincircuitswherehighstaticanddynamicdV/dtandhighdI/dtcanoccurloads.Thesedeviceswillcommutatethefullratedrmscurrentatthemaximumratedjunctiontemperature,withouttheaid | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Threequadranttriacshighcommutation GENERALDESCRIPTION Glasspassivatedhighcommutationtriacsinaplasticenvelopesuitableforsurfacemounting,intendedforuseincircuitswherehighstaticanddynamicdV/dtandhighdI/dtcanoccur.These deviceswillcommutatethefullratedrmscurrentatthemaximumratedjunctiont | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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