首页 >BH9933FVM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DUALP-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
LOWSATURATIONVOLTAGEREGULATOR | ELM ELM Electronics | ELM | ||
LOWSATURATIONVOLTAGEREGULATOR | ELM ELM Electronics | ELM | ||
LOWSATURATIONVOLTAGEREGULATOR | ELM ELM Electronics | ELM | ||
DualP-Channel2.5VSpecifiedPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualP-Channel2.5VSpecifiedPowerTrenchMOSFET GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ·–5A,–20V,RDS(ON)=55mW@VGS=–4.5 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-Channel2.5VSpecifiedPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualP-Channel2.5VSpecifiedPowerTrench짰MOSFET GeneralDescription TheseP-Channel2.5VspecifiedMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewell | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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