首页 >BFR520,235>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT416(SC75)envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransit | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfre | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor DESCRIPTION ·LowNoiseFigure NF=1.1dBTYP.@VCE=6V,IC=5mA,f=900MHz ·HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=6V,IC=20mA,f=1GHz APPLICATIONS ·DesignedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNTransistor FEATURES ♦CollectorCurrentCapabilityIC=70mA ♦CollectorEmitterVoltageVCEO=15V ♦Highpowergain ♦Lownoisefigure ♦Hightransitionfrequency MECHANICALDATA ♦Case:SOT-323(SC-70-3) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
NPNSiliconRFTransistor Description Ultrahighfrequencylownoisetransistor,planarNPNsiliconEpitaxialbipolarprocess.Withhighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics,theuseofSOT-323ultracompactchippackage,mainlyusedintheVHF,UHFandCATVhighfrequencyw | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=10V(Min.) ·ComplementtoTypeBFU520 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNWidebandSiliconRFTransistor DESCRIPTION ·LowNoiseandHighGain NF=1.8dBTYP @VCE=10V,IC=10mA,f=0.9GHz ·HighPowerGain MAG=9dBTYP. @VCE=8V,IC=40mA,f=1.0GHz ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·ApplicationsRequiringHighSu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SCHOTTKYRECTIFIER Features LowForwardVoltageDrop GuardRingConstructionforTransientProtection HighConductance | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER [Diodes] Features ●VeryLowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●HighConductance | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi Electronic devices inc. | edi |
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