首页 >BFG310/XR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelsiliconfield-effecttransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz) SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
BPS310Series-12mmUncompensatedLowPressureSensor | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SINGLE-PHASESILICONBRIDGERECTIFIER | RECTRON Rectron Semiconductor | RECTRON | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams | BYTES Bytes | BYTES |
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