NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

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NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

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丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：289.38 Kbytes 页数：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 页数：12 Pages

恩XP

丝印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket

文件：100.99 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：N6；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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