首页 >BF8205T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-channelDoubleMOSFETinaSOT23-6PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-Channel25-V(D-S)MOSFET FEATURES •Halogen-freeOptionAvailable •TrenchFET®PowerMOSFETs | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,6A,RDS(ON)=21mΩ(typ)@VGS=4.5V. RDS(ON)=30mΩ(typ)@VGS=2.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,6A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=35mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,5.2A,RDS(ON)TYP=25mW@VGS=4.5V. RDS(ON)TYP=30mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Leadfreeproductisacquired. Halogenfree. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualN-ChannelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU |
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