首页 >BF60E5F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC |
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